Infineon OptiMOS™ N-Channel MOSFET, 30 V Vdss, 4 mOhm Rds(on) max at 10 V, 40 A continuous drain at Tc, PG-TSDSON-8-FL package, -55 to 150 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 18A (Ta), 40A (Tc) |
| Power dissipation | 2.1W (Ta), 37W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Schottky Diode (Body) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 4mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 11 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1463 pF @ 15 V |
The Infineon BSZ0904NSIATMA1 is a 30 V N-channel OptiMOS™ power MOSFET in a PG-TSDSON-8-FL surface-mount package.
The datasheet lists a Schottky diode integrated in the body diode structure. This reduces the reverse-recovery charge and softens the turn-off of the body diode, which matters in synchronous-rectifier stages and half-bridge converters where the body diode conducts during dead time.
No — the part is listed as Active with no end-of-life or NRND status. Infineon continues production under the OptiMOS™ series.
Yes — the 30 V Vdss, 40 A continuous drain, and 4 mOhm Rds(on) make it suitable for lithium-ion battery protection circuits in power tools, e-bikes, and portable equipment where low on-resistance minimises heating during high discharge currents.