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Infineon Technologies BSZ0904NSIATMA1
Infineon Technologies

Infineon BSZ0904NSIATMA1 OptiMOS N-Ch MOSFET, 30 V, 4 mOhm

MPNBSZ0904NSIATMA1
End of Life

Infineon OptiMOS™ N-Channel MOSFET, 30 V Vdss, 4 mOhm Rds(on) max at 10 V, 40 A continuous drain at Tc, PG-TSDSON-8-FL package, -55 to 150 °C junction temperature.

$0.96Ref. price · indicative, final on quote
BSZ0904NSIATMA1 datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSZ0904NSIATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C18A (Ta), 40A (Tc)
Power dissipation2.1W (Ta), 37W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureSchottky Diode (Body)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs4mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs11 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1463 pF @ 15 V

Product details

30 V OptiMOS™ — what the ratings mean for the board

The Infineon BSZ0904NSIATMA1 is a 30 V N-channel OptiMOS™ power MOSFET in a PG-TSDSON-8-FL surface-mount package. The 4 mOhm maximum on-resistance at 10 V gate drive keeps I²R losses low at the 40 A continuous drain rating (case temperature).

Body diode and the Schottky feature

The datasheet lists a Schottky diode integrated in the body diode structure. This reduces the reverse-recovery charge and softens the turn-off of the body diode, which matters in synchronous-rectifier stages and half-bridge converters where the body diode conducts during dead time. The ±20 V maximum gate-source rating gives margin for gate-drive overshoot in noisy environments.

Lifecycle and sourcing posture

The BSZ0904NSIATMA1 is listed as Active with ROHS3 compliance. No end-of-life notice, no last-time-buy window — Infineon continues to manufacture this OptiMOS™ part through its standard production lines. The PG-TSDSON-8-FL package is a common Infineon footprint, so alternate-sourcing within the same family (same voltage class, similar Rds(on)) is possible, though no pin-compatible second source is listed in the official cross-reference.

Frequently asked questions

Is BSZ0904NSIATMA1 going obsolete?

No — the part is listed as Active with no end-of-life or NRND status. Infineon continues production under the OptiMOS™ series.

Can BSZ0904NSIATMA1 be used for battery protection?

Yes — the 30 V Vdss, 40 A continuous drain, and 4 mOhm Rds(on) make it suitable for lithium-ion battery protection circuits in power tools, e-bikes, and portable equipment where low on-resistance minimises heating during high discharge currents.