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BSZ0902NSATMA1

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS N-Channel MOSFET, 30 V Vdss, 19 A (Ta) / 40 A (Tc) continuous drain, 2.6 mOhm Rds(on) at 20 A, 10 V, PG-TSDSON-8-FL package, -55°C to 150°C.

Infineon Technologies BSZ0902NSATMA1
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

[ORIGINAL SEALED] [PRE-SHIP HD PHOTOS] [30D WARRANTY · COC] [TRACKED DAP/DDP]

Technical specifications

BSZ0902NSATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C19A (Ta), 40A (Tc)
Power dissipation2.1W (Ta), 48W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs2.6mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs26 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1700 pF @ 15 V

Technical details

2.6 mOhm Rds(on) — the conduction loss floor

Infineon BSZ0902NSATMA1 N-channel OptiMOS MOSFET: 30 V Vdss, 2.6 mOhm Rds(on) at 20 A, 10 V. The dual current rating — 19 A at 25°C ambient (Ta) and 40 A at case temperature (Tc) — tells you the thermal limit depends heavily on the board layout: the 19 A figure assumes no heatsink beyond the PCB copper, while the 40 A figure requires a heatsink on the package's exposed pad.

The package is an 8-lead PowerTDFN (PG-TSDSON-8-FL), a surface-mount footprint with an exposed drain pad.

Design-in checklist: drive voltage, capacitance, and footprint

Input capacitance is 1700 pF at 15 V Vds. Gate charge is 26 nC at 10 V. Maximum Vgs is ±20 V. Power dissipation is 2.1 W at ambient and 48 W at case temperature.

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