Infineon OptiMOS™ 3 BSZ088N03LSG N-Channel MOSFET, 30 V drain-source, 8.8 mOhm max Rds(on) at 20 A, 10 V gate drive, 21 nC gate charge, PG-TSDSON-8 package, -55 to 150 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ 3 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 12A (Ta), 50A (Tc) |
| Power dissipation | 2.1W (Ta), 35W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 8.8mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 21 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1700 pF @ 15 V |
The Infineon BSZ088N03LSG is a 30 V N-channel MOSFET from the OptiMOS™ 3 family, housed in a PG-TSDSON-8 (PowerTDFN) package. The 21 nC typical gate charge keeps switching losses manageable in DC-DC converters and motor-drive half-bridges.
At 4.5 V drive the on-resistance rises.
The PG-TSDSON-8 package (8-lead PowerTDFN) has an exposed drain pad on the bottom. Without that, the 50 A continuous rating is unreachable in practice.
Yes. The 30 V drain-source rating, 50 A continuous current capability (with adequate heatsinking), and 21 nC gate charge make it suitable for low-voltage brushless DC motor drives and solenoid drivers.