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Infineon Technologies BSZ086P03NS3GATMA1

Infineon BSZ086P03NS3GATMA1 P-Channel MOSFET, 30V, 8.6mOhm

MPNBSZ086P03NS3GATMA1
End of Life

Infineon OptiMOS BSZ086P03NS3GATMA1, P-Channel MOSFET, 30V Vdss, 13.5A (Ta) / 40A (Tc) continuous drain, 8.6mOhm Rds(on) at 20A, 10V, PG-TSDSON-8 package, -55 to 150°C.

$0.86Ref. price · indicative, final on quote
Infineon Technologies BSZ086P03NS3GATMA1 datasheet (PDF)
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSZ086P03NS3GATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C13.5A (Ta), 40A (Tc)
Power dissipation2.1W (Ta), 69W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.1V @ 105µA
Rds on (Max) @ id, vgs8.6mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs57.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4785 pF @ 15 V

Product details

The device is housed in an 8-PowerTDFN package, Infineon's PG-TSDSON-8. This is a surface-mount, power-optimised footprint with a large exposed drain pad for thermal transfer through the PCB. For production planning, the dual current rating (13.5 A at Ta, 40 A at Tc) means the board layout — specifically the copper area and via array under the drain pad — determines the usable continuous current in the final design.

The BSZ086P03NS3GATMA1 has an active product status with no end-of-life notification on record. No official second source or cross-reference is listed in the available data; the N-channel CoolMOS IPD50R950CEAUMA1 is a different polarity and voltage class (500 V N-channel) and is not a functional replacement for this P-channel 30 V part.

Frequently asked questions

What is the Rds(on) of BSZ086P03NS3GATMA1?

The maximum on-resistance is 8.6 mOhm at a drain current of 20 A and a gate-source voltage of 10 V. This is the figure to use for conduction-loss calculations in the load path.

What package does BSZ086P03NS3GATMA1 use?

The device is in an 8-PowerTDFN package, specifically the Infineon PG-TSDSON-8. It is a surface-mount package with an exposed drain pad for thermal management.

What is the gate charge of BSZ086P03NS3GATMA1?

The maximum gate charge (Qg) is 57.5 nC at a gate voltage of 10 V. This value determines the gate-driver power and switching speed budget.

Is BSZ086P03NS3GATMA1 RoHS compliant?

Yes, the part is ROHS3 compliant, meeting the current lead-free directive for soldering processes.