BSZ086P03NS3EGATMA1 - Infineon Technologies
MPNBSZ086P03NS3EGATMA1
End of Life
MOSFET P-CH 30V 13.5A/40A TSDSON
$0.93Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 13.5A (Ta), 40A (Tc) |
| Power dissipation | 2.1W (Ta), 69W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 3.1V @ 105µA |
| Rds on (Max) @ id, vgs | 8.6mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 57.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4785 pF @ 15 V |