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Infineon Technologies BSZ075N08NS5ATMA1

Infineon BSZ075N08NS5ATMA1 N-Channel MOSFET, 80V 40A

MPNBSZ075N08NS5ATMA1
End of Life

Infineon OptiMOS™ N-Channel MOSFET, 80 V drain-to-source voltage, 40 A continuous drain current, 7.5 mOhm on-resistance at 10 V gate drive, PG-TSDSON-8 package, -55 to 150 °C junction temperature.

$1.82Ref. price · indicative, final on quote
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSZ075N08NS5ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C40A (Tc)
Power dissipation69W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.8V @ 36µA
Rds on (Max) @ id, vgs7.5mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs29.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2080 pF @ 40 V

Product details

80 V, 40 A N-channel in a 3.3 x 3.3 mm TSDSON-8

The Infineon BSZ075N08NS5ATMA1 is an 80 V, 40 A N-channel MOSFET from the OptiMOS™ series. The 7.5 mOhm maximum on-resistance at 10 V gate drive keeps conduction losses low for a 40 A rated part. Gate charge is 29.5 nC at 10 V. The PG-TSDSON-8 footprint fits tight layout zones; the exposed pad drains heat to the PCB copper plane. Junction temperature range is -55 to 150 °C.

Sourcing and lifecycle

The BSZ075N08NS5ATMA1 is listed as active in production. The part is RoHS3 compliant.

Frequently asked questions

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