Infineon OptiMOS™ N-Channel MOSFET, 80 V drain-to-source voltage, 40 A continuous drain current, 7.5 mOhm on-resistance at 10 V gate drive, PG-TSDSON-8 package, -55 to 150 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 40A (Tc) |
| Power dissipation | 69W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 3.8V @ 36µA |
| Rds on (Max) @ id, vgs | 7.5mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 29.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2080 pF @ 40 V |
The Infineon BSZ075N08NS5ATMA1 is an 80 V, 40 A N-channel MOSFET from the OptiMOS™ series. Gate charge is 29.5 nC at 10 V. The PG-TSDSON-8 footprint fits tight layout zones; the exposed pad drains heat to the PCB copper plane. Junction temperature range is -55 to 150 °C.
The part is RoHS3 compliant.
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