80 V N-channel for 48 V rails and high-density switching
The BSZ070N08LS5ATMA1 from Infineon's OptiMOS™ 5 family is an N-channel enhancement-mode MOSFET rated at 80 V drain-source and 40 A continuous drain current.
7 mOhm Rds(on) — what it means for conduction loss
At 40 A full load, the conduction loss (I² × R) lands around 11.2 W at 25°C junction — well within the 69 W package dissipation capability, but real junction temperature rise will increase Rds(on) by roughly 50% at 125°C, so the loss budget needs a derating factor. The drive voltage range (4.5 V to 10 V) means a standard 5 V or 10 V gate driver can fully enhance the channel; using 4.5 V logic-level drive raises Rds(on) slightly but still achieves useful on-resistance for lower-current branches.
Gate charge and switching speed
Total gate charge is 5 nC at 4.5 V and 2340 pF input capacitance at 40 V drain bias — a light capacitive load that lets the MOSFET switch fast without a high-current gate driver.
Package and thermal path
Housed in an 8-PowerTDFN (PG-TSDSON-8-FL), this package exposes the large drain pad on the bottom — the primary heat path is through the pad into the PCB copper plane. The 69 W power dissipation rating assumes the pad is soldered to a thermal land with adequate via array to inner layers. Without that, the effective RthJA rises and the 40 A continuous rating derates. The package is surface-mount, compatible with standard reflow profiles for lead-free solder.
Temperature range and operating environment
The 150°C absolute maximum junction means the part can survive short-duration overtemperature events, but continuous operation above 125°C should be verified against the thermal derating curve for Rds(on) and leakage.
Lifecycle and sourcing posture
It is ROHS3 compliant.