The part is symmetrical in the reel but the pad orientation is obvious once you see the chamfered corner. No hot-air station required for rework if you have a soldering iron with a fine chisel tip and some flux; just pre-tin the pad and reflow with a hot plate or a small oven. The package marking is legible under a loupe, so you can verify polarity before soldering.
BSZ068N06NSATMA1
Infineon Technologies · OptiMOS™ Series
Infineon OptiMOS™ N-Channel MOSFET, BSZ068N06NSATMA1, 60 Vdss, 40 A Id, 6.8 mOhm Rds(on) @ 20 A, 10 V, PG-TSDSON-8-FL package, -55 to 150 °C.
[IN STOCK] In Stock: 23 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 40A (Tc) |
| Power dissipation | 2.1W (Ta), 46W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 3.3V @ 20µA |
| Rds on (Max) @ id, vgs | 6.8mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 21 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1500 pF @ 30 V |
Technical details
BSZ068N06NSATMA1
[ALLOC] verified