The part is symmetrical in the reel but the pad orientation is obvious once you see the chamfered corner. No hot-air station required for rework if you have a soldering iron with a fine chisel tip and some flux; just pre-tin the pad and reflow with a hot plate or a small oven. The package marking is legible under a loupe, so you can verify polarity before soldering.

Infineon BSZ068N06NSATMA1 N-Channel MOSFET, 60V 40A
Infineon OptiMOS™ N-Channel MOSFET, BSZ068N06NSATMA1, 60 Vdss, 40 A Id, 6.8 mOhm Rds(on) @ 20 A, 10 V, PG-TSDSON-8-FL package, -55 to 150 °C.
Specifications
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 40A (Tc) |
| Power dissipation | 2.1W (Ta), 46W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 3.3V @ 20µA |
| Rds on (Max) @ id, vgs | 6.8mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 21 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1500 pF @ 30 V |
Product details
Frequently asked questions
What is the Rds(on) of BSZ068N06NSATMA1?
The maximum on-resistance is 6.8 mOhm at a drain current of 20 A with a 10 V gate drive. That is the figure to use for conduction-loss calculations at full load.
What is the gate charge (Qg) of BSZ068N06NSATMA1?
The maximum gate charge is 21 nC at a gate voltage of 10 V. This moderate Qg means a standard gate-driver IC can switch the MOSFET without excessive switching losses.
Is BSZ068N06NSATMA1 RoHS compliant?
Yes — it is ROHS3 compliant, meeting the EU Restriction of Hazardous Substances directive for lead and other restricted materials.