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Infineon Technologies BSZ068N06NSATMA1

Infineon BSZ068N06NSATMA1 N-Channel MOSFET, 60V 40A

MPNBSZ068N06NSATMA1
End of Life

Infineon OptiMOS™ N-Channel MOSFET, BSZ068N06NSATMA1, 60 Vdss, 40 A Id, 6.8 mOhm Rds(on) @ 20 A, 10 V, PG-TSDSON-8-FL package, -55 to 150 °C.

$1.21Ref. price · indicative, final on quote
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSZ068N06NSATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C40A (Tc)
Power dissipation2.1W (Ta), 46W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.3V @ 20µA
Rds on (Max) @ id, vgs6.8mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs21 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1500 pF @ 30 V

Product details

Package and mounting

The 8-PowerTDFN is a surface-mount package with a large exposed pad on the bottom. That pad is the drain connection and the primary thermal path — solder it to a copper plane on the PCB with a thermal via array under the pad. The part is symmetrical in the reel but the pad orientation is obvious once you see the chamfered corner. No hot-air station required for rework if you have a soldering iron with a fine chisel tip and some flux; just pre-tin the pad and reflow with a hot plate or a small oven. The package marking is legible under a loupe, so you can verify polarity before soldering.

Lifecycle and compliance — no end-of-life watch needed

It is ROHS3 compliant, so it passes the material declarations for EU and most global markets.

Frequently asked questions

What is the Rds(on) of BSZ068N06NSATMA1?

The maximum on-resistance is 6.8 mOhm at a drain current of 20 A with a 10 V gate drive. That is the figure to use for conduction-loss calculations at full load.

What is the gate charge (Qg) of BSZ068N06NSATMA1?

The maximum gate charge is 21 nC at a gate voltage of 10 V. This moderate Qg means a standard gate-driver IC can switch the MOSFET without excessive switching losses.

Is BSZ068N06NSATMA1 RoHS compliant?

Yes — it is ROHS3 compliant, meeting the EU Restriction of Hazardous Substances directive for lead and other restricted materials.