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Infineon Technologies BSZ067N06LS3GATMA1
Infineon Technologies

Infineon BSZ067N06LS3GATMA1 N-Channel MOSFET, 60 V, 6.7 mOhm

MPNBSZ067N06LS3GATMA1
End of Life

Infineon OptiMOS™ BSZ067N06LS3GATMA1, N-Channel MOSFET, 60 V Vdss, 14 A (Ta) / 20 A (Tc) continuous drain, 6.7 mOhm Rds(on) at 20 A, 10 V, PG-TSDSON-8 package, -55 to 150 °C junction temperature.

$1.42Ref. price · indicative, final on quote
BSZ067N06LS3GATMA1 datasheet
Packaging8-PowerVDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSZ067N06LS3GATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C14A (Ta), 20A (Tc)
Power dissipation2.1W (Ta), 69W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.2V @ 35µA
Rds on (Max) @ id, vgs6.7mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs67 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5100 pF @ 30 V

Product details

60 V N-channel OptiMOS™ — the switching-loss and conduction-loss trade-off

The Infineon BSZ067N06LS3GATMA1 is a 60 V N-channel MOSFET from the OptiMOS™ family, built on a trench-gate process that balances low on-resistance with moderate gate charge. The 6.7 mOhm Rds(on) at 10 V drive and 20 A continuous drain current (Tc) targets DC-DC converters, OR-ing circuits, and motor-drive half-bridges where conduction loss dominates the thermal budget.

PG-TSDSON-8 — what the hot-air station sees

The pad is the primary heat path — the 69 W Tc rating assumes the pad is soldered to a substantial copper area. Under a hot-air rework station the part lifts cleanly if the board-side pad has thermal vias to a ground plane; without them the pad holds heat and the risk of lifting a pad goes up.

Frequently asked questions

Will BSZ067N06LS3GATMA1 drop into a board designed for IPD50R950CEAUMA1?

No. The IPD50R950CEAUMA1 is a 500 V CoolMOS™ CE device in a DPAK (TO-252) package with a 950 mOhm Rds(on). The BSZ067N06LS3GATMA1 is a 60 V OptiMOS™ in a PG-TSDSON-8 package. The voltage class, package footprint, and pinout are completely different — they are not functional substitutes and the board layout would need to change.