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Infineon Technologies BSZ065N06LS5ATMA1

Infineon BSZ065N06LS5ATMA1 N-Channel MOSFET

MPNBSZ065N06LS5ATMA1
End of Life

Infineon OptiMOS™ BSZ065N06LS5ATMA1, N-Channel MOSFET, 60V Vdss, 40A Id, 6.5mOhm Rds(on) @ 20A 10V, PG-TSDSON-8-FL, -55°C to 150°C.

$1.35Ref. price · indicative, final on quote
Infineon Technologies BSZ065N06LS5ATMA1 datasheet (PDF)
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSZ065N06LS5ATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C40A (Tc)
Power dissipation46W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureStandard
Case8-PowerTDFN
Vgs(th) (Max) @ id2.3V @ 20µA
Rds on (Max) @ id, vgs6.5mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1800 pF @ 30 V

Product details

Package and mounting — PG-TSDSON-8-FL

Housed in an 8-PowerTDFN (PG-TSDSON-8-FL) surface-mount package, the BSZ065N06LS5ATMA1 is designed for automated assembly on standard PCB footprints. The supplier device package code PG-TSDSON-8-FL indicates a small-outline, no-lead package with an exposed drain pad for thermal management. The part is available in Tape & Reel (TR) and Cut Tape (CT) options for different production volumes.

It is ROHS3 compliant, meeting the latest EU restriction-of-hazardous-substances directive.

Frequently asked questions

What is the equivalent of BSZ065N06LS5ATMA1?

The IPD50R950CEAUMA1 is a different-class device (500 V, 4.3 A, CoolMOS™ CE) and is not a functional equivalent. For a same-class 60 V N-channel MOSFET, consult the OptiMOS™ family cross-reference for pin-compatible options with similar Rds(on) and gate charge.