The Infineon BSZ060NE2LSATMA1 is a 25 V N-channel MOSFET from the OptiMOS series.
At 4.5 V the on-resistance will be higher than the 6 mOhm maximum specified at 10 V. The 670 pF input capacitance at 12 V drain-source is modest, so the gate driver doesn't need to source a large peak current for fast edges.
Power dissipation and thermal design
The part is rated for 2.1 W dissipation with the junction at 25°C ambient (no heatsink, just the board copper) and 26 W when the case is held at 25°C. In practice, the 26 W figure assumes a large heatsink or forced air — the 2.1 W ambient rating is the realistic limit for a densely populated PCB without dedicated cooling. The 40 A continuous drain rating at Tc=25°C requires a heatsink that keeps the case near ambient. For most designs, the 12 A ambient rating is the usable continuous current; the 40 A figure applies only with substantial thermal management.
It is ROHS3 compliant, so no exemption paperwork is needed for EU or California shipments.