30 V N-channel in a compact TSDSON-8
The Infineon BSZ050N03LSGATMA1 is an N-channel MOSFET from the OptiMOS™ family, rated for 30 V drain-source and a continuous drain current of 16 A at ambient temperature or 40 A at case temperature.
Gate charge and switching behaviour
Gate charge totals 35 nC at 10 V, and input capacitance is 2800 pF at 15 V Vds.
Thermal and package constraints
Power dissipation is rated at 2.1 W at ambient temperature and 50 W at case temperature — the package and PCB copper area determine the real thermal limit. The PG-TSDSON-8 footprint is an 8-lead PowerTDFN with an exposed pad; a solid thermal via pattern under the pad is expected for designs approaching the 40 A case-rated current. Surface-mount assembly is standard, and the ±20 V maximum gate-source rating gives headroom for gate-drive overshoot.
Lifecycle and compliance
The BSZ050N03LSGATMA1 carries an active product status and is ROHS3 compliant. The series is OptiMOS™, Infineon's low-voltage trench MOSFET platform.