Infineon OptiMOS™ BSZ0506NSATMA1, N-Channel MOSFET, 30 V Vdss, 4.4 mOhm Rds(on) at 10 V, 15 A (Ta) / 40 A (Tc), PG-TSDSON-8-FL, -55°C to 150°C junction.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 15A (Ta), 40A (Tc) |
| Power dissipation | 2.1W (Ta), 27W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 4.4mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 15 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 950 pF @ 15 V |
The dual current rating reflects the thermal path: 15 A at ambient (Ta) assumes natural convection on a standard board; 40 A at case temperature (Tc) requires a low-thermal-resistance path to a heatsink or PCB copper pour.
Gate charge of 15 nC at 10 V and input capacitance of 950 pF at 15 V Vds are moderate figures for a 30 V device in this package.
The IPD50R950CEAUMA1 is a 500 V CoolMOS device — a different voltage class entirely — so it is not a functional replacement for this 30 V OptiMOS part. No same-voltage-class second source appears in the record.