Package and thermal path — PG-TSDSON-8-FL
The power dissipation rating of 50 W at the case temperature tells the designer that the thermal interface — PCB copper area, vias, and heatsink if needed — is the limiting factor, not the silicon.
BSZ0501NSIATMA1
Infineon Technologies · OptiMOS™ Series
Infineon OptiMOS™ N-Channel MOSFET, 30V Vdss, 40A continuous drain at case, 2mOhm Rds(on) at 10V, PG-TSDSON-8-FL package, -55°C to 150°C junction temperature.
[IN STOCK] In Stock: 58 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 25A (Ta), 40A (Tc) |
| Power dissipation | 2.1W (Ta), 50W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 2mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 33 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2000 pF @ 15 V |
Technical details
BSZ0501NSIATMA1
[ALLOC] verified