30 V N-channel in a compact PowerTDFN — what it is and where it fits
The Infineon BSZ0500NSIATMA1 is an N-channel MOSFET from the OptiMOS™ family, rated for 30 V drain-source voltage and 40 A continuous drain current at case temperature. It comes in an 8-PowerTDFN package (PG-TSDSON-8-FL).
1.5 mOhm Rds(on) — what the low resistance buys you
The 1.5 mOhm figure at 20 A / 10 V is the headline efficiency spec. Conduction loss at 30 A is manageable with the 69 W maximum power dissipation at case temperature.
Gate charge and switching — 52 nC at 10 V
Gate charge (Qg) of 52 nC at 10 V is moderate for this current class. The 3400 pF input capacitance at 15 V Vds gives the driver a capacitive load to charge each cycle.
Package and mounting — PG-TSDSON-8-FL
The PG-TSDSON-8-FL is a PowerTDFN with an exposed drain pad on the bottom. It requires a solder-paste stencil design that covers the pad area — typically a single large aperture or an array of smaller ones depending on your assembly house's capability. The surface-mount footprint is small, but the thermal performance depends entirely on the PCB copper area and via array under the pad. For a 40 A design, plan for at least a 2 oz copper pour on the top layer and multiple thermal vias to inner or bottom layers.
Lifecycle and sourcing — active, no LTB pressure
Infineon lists the BSZ0500NSIATMA1 as Active. ROHS3 compliant, no exemptions to track. For volume production or a BOM freeze, this part is safe to qualify in — no lifecycle-driven redesign needed in the near term.