3.4 mOhm at 20 A — the conduction-loss floor
The BSZ034N04LSATMA1 is an Infineon OptiMOS™ N-channel MOSFET rated for 40 V drain-source and a continuous drain current of 19 A at 25 °C ambient or 40 A at the case.
Gate charge and switching speed
Total gate charge is 25 nC at 10 V gate drive, with an input capacitance of 1800 pF at 20 V drain-source. The 4.5 V and 10 V drive voltage options let the designer trade off Rds(on) against gate-drive complexity — a 10 V rail delivers the full 3.4 mOhm, while a 4.5 V rail still achieves a useful on-resistance for lower-voltage logic interfaces.
Package and thermal management
Housed in the PG-TSDSON-8-FL package (8-PowerTDFN), the part is surface-mount with an exposed thermal pad. The package pitch and board layer count are set by the thermal dissipation requirements.
