BSZ031NE2LS5ATMA1

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS™, N-Channel MOSFET, 25 V, 19 A (Ta) / 40 A (Tc), 3.1 mOhm at 20 A, 10 V, PG-TSDSON-8-FL, -55°C to 150°C.

Infineon Technologies BSZ031NE2LS5ATMA1
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[IN STOCK] In Stock: 12 pcs
$1.25/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BSZ031NE2LS5ATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage25 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C19A (Ta), 40A (Tc)
Power dissipation2.1W (Ta), 30W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs3.1mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs18.3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1230 pF @ 12 V

Technical details

The Infineon BSZ031NE2LS5ATMA1 is a 25 V N-channel MOSFET from the OptiMOS™ series, housed in a PG-TSDSON-8-FL surface-mount package. It is designed for low-voltage dc-dc conversion, load switching, and OR-ing applications where conduction loss matters. The headline numbers are a continuous drain current of 19 A at 25°C ambient (Ta) and 40 A at the case (Tc), with a maximum Rds(on) of 3.1 mOhm at 20 A and 10 V gate drive. Gate charge is 18.3 nC at 10 V; input capacitance is 1230 pF at 12 V Vds.

Power dissipation is 2.1 W at ambient and 30 W at case.

BSZ031NE2LS5ATMA1
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