40 V N-channel OptiMOS™ — what this MOSFET brings to the board
The Infineon BSZ028N04LSATMA1 is a 40 V N-channel MOSFET from the OptiMOS™ series, built for low-voltage synchronous rectification, DC-DC converters, and motor-drive output stages where conduction loss matters. Its headline on-resistance of 2.8 mOhm at 20 A, 10 V gate drive keeps I²R losses low in a 21 A (Ta) / 40 A (Tc) continuous current envelope. The PG-TSDSON-8-FL package — an 8-lead PowerTDFN with exposed pad — routes heat into the PCB copper pour, so the 63 W case-rated dissipation is achievable with proper thermal vias and a solid ground plane.
Rds(on) and gate charge — the switching and conduction trade-off
The 2.8 mOhm maximum at 10 V gate drive defines the conduction loss budget. The 32 nC gate charge at 10 V tells the driver what it must deliver per switching cycle.
Temperature range and environment
Rated for junction temperature from -55°C to 150°C, this MOSFET fits applications where ambient extremes are routine — avionics, outdoor telecom cabinets, engine-bay electronics, and downhole instrumentation. The 150°C maximum junction allows headroom for self-heating in compact enclosures. The PG-TSDSON-8-FL package is surface-mount only; no through-hole variant exists in this series.