Infineon OptiMOS™ N-Channel MOSFET, 30 V Vdss, 22 A (Ta) / 40 A (Tc) continuous drain, 1.9 mOhm Rds(on) at 10 V, PG-TSDSON-8-FL package, -55 to 150 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 22A (Ta). 40A (Tc) |
| Power dissipation | 2.1W (Ta), 69W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 1.9mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 44 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2800 pF @ 15 V |
The BSZ019N03LSATMA1: At 20 A drain current and 10 V gate drive, the on-resistance maxes out at 1.9 mOhm. The 44 nC gate charge at 10 V is moderate; a standard gate driver can switch it without excessive cross-conduction in a half-bridge, but the 2800 pF input capacitance at 15 V means the driver's peak current should be sized for clean edges to avoid ringing.
ROHS3 compliant, no lead, no restricted substances — clears the compliance gate for new builds.
Yes, it is ROHS3 Compliant — no lead, no restricted substances per the current directive.
The continuous drain current is rated at 22 A at 25 °C ambient (Ta) and 40 A at 25 °C case temperature (Tc). The higher figure requires effective thermal management through the package's exposed pad.
We source this part to order; availability and pricing are confirmed at quote time. Contact our sales team for current lead time and pricing.