Low-voltage power switch for 12 V and 24 V rails
The Infineon BSZ018NE2LSIATMA1 is an N-channel MOSFET from the OptiMOS™ series, rated for a drain-to-source voltage of 25 V and a continuous drain current of 40 A at the case temperature (Tc), with a maximum on-resistance of 1.8 mOhm at a 20 A drain current and 10 V gate drive. It comes in a PG-TSDSON-8-FL surface-mount package, a 8-lead PowerTDFN footprint that handles up to 69 W of power dissipation at the case.
The BSZ018NE2LSIATMA1 carries an Active lifecycle status from Infineon, with no NRND or EOL notices. It is ROHS3 compliant.
