Infineon OptiMOS™ BSZ018NE2LSIATMA1 N-Channel MOSFET, 25 V Vdss, 40 A continuous drain (Tc), 1.8 mOhm max Rds(on) at 10 V, PG-TSDSON-8-FL package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 25 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 22A (Ta), 40A (Tc) |
| Power dissipation | 2.1W (Ta), 69W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 1.8mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 36 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2500 pF @ 12 V |
The Infineon BSZ018NE2LSIATMA1 is an N-channel MOSFET from the OptiMOS™ series, rated for a drain-to-source voltage of 25 V and a continuous drain current of 40 A at the case temperature (Tc), with a maximum on-resistance of 1.8 mOhm at a 20 A drain current and 10 V gate drive. It comes in a PG-TSDSON-8-FL surface-mount package, a 8-lead PowerTDFN footprint that handles up to 69 W of power dissipation at the case.
It is ROHS3 compliant.
Yes, it is ROHS3 compliant per the Infineon listing.
The package is PG-TSDSON-8-FL, an 8-lead PowerTDFN. The exact footprint dimensions are in the Infineon datasheet.