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Infineon Technologies BSZ010NE2LS5ATMA1

Infineon BSZ010NE2LS5ATMA1 N-Ch MOSFET, 25 V, 1 mOhm

MPNBSZ010NE2LS5ATMA1
End of Life

Infineon OptiMOS™ 5 BSZ010NE2LS5ATMA1, N-Channel MOSFET, 25 V Vdss, 40 A continuous drain, 1 mOhm Rds(on) at 10 V, PG-TSDSON-8-FL package, -55 to 150 °C junction.

$2.79Ref. price · indicative, final on quote
Infineon Technologies BSZ010NE2LS5ATMA1 datasheet (PDF)
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™ 5
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSZ010NE2LS5ATMA1 specifications
ParameterValue
SeriesOptiMOS™ 5
FET typeN-Channel
MountingSurface Mount
Drain to source voltage25 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C32A (Ta), 40A (Tc)
Power dissipation2.1W (Ta), 69W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs1mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs29 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds3900 pF @ 12 V

Product details

It handles a 25 V drain-to-source voltage and delivers up to 40 A continuous drain current at the case (Tc), with a 32 A rating at ambient (Ta). The headline number is the 1 mOhm maximum on-resistance at 10 V gate drive and 20 A — that milliohm figure keeps conduction losses low in a 12 V or 5 V rail, which is exactly where this part gets used: synchronous buck converters, load switches, battery protection, and OR-ing diodes in telecom or industrial gear.

The PG-TSDSON-8-FL package can sink conduction loss to the PCB copper through its exposed pad.

Package and mounting — PG-TSDSON-8-FL

The 8-PowerTDFN case (Infineon calls it PG-TSDSON-8-FL) is a surface-mount package with a large drain pad on the bottom. For a 40 A design, expect a multi-layer board with at least 2 oz copper and a dedicated thermal land.

No last-time-buy or NRND flags are on record.

Frequently asked questions

What is the gate charge and why does it matter?

The maximum gate charge is 29 nC at 4.5 V. That low Qg means the gate driver does not need to supply much current to switch the FET quickly — important for keeping switching losses down in a high-frequency converter.