BSZ010NE2LS5ATMA1

Infineon Technologies · OptiMOS™ 5 Series

Infineon OptiMOS™ 5 BSZ010NE2LS5ATMA1, N-Channel MOSFET, 25 V Vdss, 40 A continuous drain, 1 mOhm Rds(on) at 10 V, PG-TSDSON-8-FL package, -55 to 150 °C junction.

Infineon Technologies BSZ010NE2LS5ATMA1
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[IN STOCK] In Stock: 39 pcs
$4.39/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BSZ010NE2LS5ATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™ 5
FET typeN-Channel
MountingSurface Mount
Drain to source voltage25 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C32A (Ta), 40A (Tc)
Power dissipation2.1W (Ta), 69W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs1mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs29 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds3900 pF @ 12 V

Technical details

It handles a 25 V drain-to-source voltage and delivers up to 40 A continuous drain current at the case (Tc), with a 32 A rating at ambient (Ta). The headline number is the 1 mOhm maximum on-resistance at 10 V gate drive and 20 A — that milliohm figure keeps conduction losses low in a 12 V or 5 V rail, which is exactly where this part gets used: synchronous buck converters, load switches, battery protection, and OR-ing diodes in telecom or industrial gear.

The PG-TSDSON-8-FL package can sink conduction loss to the PCB copper through its exposed pad.

Package and mounting — PG-TSDSON-8-FL

The 8-PowerTDFN case (Infineon calls it PG-TSDSON-8-FL) is a surface-mount package with a large drain pad on the bottom. For a 40 A design, expect a multi-layer board with at least 2 oz copper and a dedicated thermal land.

No last-time-buy or NRND flags are on record.

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