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Infineon Technologies BSS84PWH6327XTSA1 — Discrete Semiconductors

Infineon BSS84PWH6327XTSA1 P-Channel MOSFET

MPNBSS84PWH6327XTSA1
Active

Infineon SIPMOS P-Channel MOSFET, 60 V drain-source, 150 mA continuous drain, 8 Ohm Rds(on) at 10 V gate drive, PG-SOT323 package, -55 to 150 °C operating temperature.

$0.3300Ref. price · indicative, final on quote
Infineon Technologies BSS84PWH6327XTSA1 datasheet (PDF)
PackagingSC-70, SOT-323
RoHSROHS3 Compliant
SeriesSIPMOS®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BSS84PWH6327XTSA1 specifications
ParameterValue
SeriesSIPMOS®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C150mA (Ta)
Power dissipation300mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSC-70, SOT-323
Vgs(th) (Max) @ id2V @ 20µA
Rds on (Max) @ id, vgs8Ohm @ 150mA, 10V
Gate charge (Qg) (Max) @ vgs1.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds19.1 pF @ 25 V

Product details

SIPMOS P-channel for signal-level switching

The PG-SOT323 (SC-70) footprint keeps board area small, at the cost of 300 mW maximum power dissipation at ambient. Full -55 to 150 °C junction temperature range qualifies it for automotive under-hood, industrial outdoor, and avionics bay environments where the temperature swing is wide.

Gate drive and switching speed

With only 19.1 pF input capacitance at 25 V drain-source and 1.5 nC gate charge, this MOSFET can be driven directly from a 4.5 V or 10 V gate drive without a dedicated gate-driver IC.

No last-time-buy or end-of-life notification is in force. The base product number BSS84 covers a family of P-channel parts in various packages.

Frequently asked questions

Is BSS84PWH6327XTSA1 obsolete?

No. Infineon lists it as Active with ROHS3 compliance. No end-of-life notice is in effect.