P-Channel switch for high-side load control
The BSS84PL6433HTMA1: With a maximum on-resistance of 8 Ohm at Vgs = 10 V and Id = 170 mA, this device is suited for low-current high-side switching applications where a P-Channel simplifies the gate drive — no level shifter needed when the source is tied to the positive rail.
Parametric fit for signal-level switching
Gate threshold voltage is 2 V maximum at 20 µA drain current, which means the MOSFET turns on fully with logic-level gate drives down to 4.5 V (the minimum drive voltage for rated Rds(on)). Total gate charge is 1.5 nC at 10 V, and input capacitance measures 19 pF at 25 V Vds — the switching losses at moderate frequencies (below 1 MHz) are negligible, making this a fit for GPIO-controlled loads or power sequencing circuits.