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Infineon Technologies BSS84PL6327HTSA1 — Discrete Semiconductors

BSS84PL6327HTSA1 P-Channel MOSFET, 60V 170mA, SOT-23

MPNBSS84PL6327HTSA1
Obsolete

Infineon SIPMOS® BSS84PL6327HTSA1, P-Channel MOSFET, 60 Vdss, 170 mA Id, 8 Ohm Rds(on) @ 10V, PG-SOT23 package.

$0.3900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSS84PL6327HTSA1 specifications
ParameterValue
SeriesSIPMOS®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C170mA (Ta)
Power dissipation360mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2V @ 20µA
Rds on (Max) @ id, vgs8Ohm @ 170mA, 10V
Gate charge (Qg) (Max) @ vgs1.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds19 pF @ 25 V

Product details

60 V, 170 mA — small-signal P-channel switch

The Infineon BSS84PL6327HTSA1 is a P-Channel enhancement-mode MOSFET from the SIPMOS® series, housed in a PG-SOT23 surface-mount package. It is rated for a drain-source voltage of 60 V and a continuous drain current of 170 mA at 25°C, with an on-resistance of 8 Ohm maximum at 10 V gate drive. This is a small-signal switching device, not a power MOSFET — use it for load switching, level shifting, or signal gating in low-current paths where the 360 mW power dissipation ceiling is respected.

Gate threshold and drive compatibility

Gate charge is only 1.5 nC at 10 V, making this a light load for a GPIO pin or a small driver.

This part is listed as Obsolete by Infineon.

Frequently asked questions

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