60 V, 170 mA P-channel small-signal MOSFET — what it does
The Infineon BSS84P E6433 is a P-channel enhancement-mode MOSFET from the SIPMOS® family, designed for low-power load switching and level-shifting applications. It handles a drain-source voltage up to 60 V and a continuous drain current of 170 mA at 25°C, with a maximum on-resistance of 8 Ω when driven at 10 V gate voltage. The device comes in a PG-SOT23 (SOT-23-3) surface-mount package, making it a compact choice for space-constrained boards.
The 60 V drain-source breakdown voltage gives headroom for 12 V, 24 V, and even 48 V rails with derating. The 170 mA continuous drain current suits small loads like relay coils, LED strings, or logic-level signal switching — not power conversion. The 8 Ω Rds(on) at 10 V drive is relatively high, so expect a voltage drop of about 1.36 V at full rated current; for lower-drop applications, consider a logic-level gate drive at 4.5 V (the minimum drive voltage listed) which will increase Rds(on) further. Gate charge is just 1.5 nC at 10 V, and input capacitance is 19 pF at 25 V drain-source — these low values mean the gate can be driven directly from a microcontroller GPIO without a dedicated gate driver, and switching losses at moderate frequencies (tens to low hundreds of kHz) are negligible. The 360 mW power dissipation at 25°C ambient (PG-SOT23 package) limits continuous power handling; derate for higher ambient temperatures.
No official successor — cross-reference with care
Infineon does not list a direct replacement or successor for the BSS84P E6433. The generic BSS84 (without the P suffix) is a common cross-reference, but it may have different electrical characteristics or package marking — verify the datasheet against your application before substituting. For a new design, consider a current-production P-channel MOSFET in SOT-23 with similar voltage and current ratings, such as the Diodes Inc. BSS84-7-F or the ON Semiconductor NTS2101PT1G, but confirm pin compatibility and parametric fit.