160 mOhm Rds(on) in a SOT323 — load-switch and rail-switch fit
The 160 mOhm maximum on-resistance is specified at 1.4 A with a 2.5 V gate drive, meaning it turns on hard from a 2.5 V logic rail — no separate gate driver needed for most low-side or load-switch duty. The gate charge is only 0.6 nC at 2.5 V, so a microcontroller GPIO can switch it at moderate frequencies without excessive drive current. Input capacitance is 180 pF at 10 V drain-source, keeping the switching losses low in a 100–500 kHz DC-DC converter.
Thermal budget at 500 mW — what the SOT323 can sink
The package dissipates 500 mW at 25°C ambient (Ta). With 160 mOhm Rds(on) and 1.4 A, the conduction loss is I²R = 1.4² × 0.16 = 0.31 W, leaving about 190 mW of headroom for switching losses and ambient temperature rise. In a 70°C environment, derate the power by the SOT323 thermal resistance — expect the usable continuous current to drop to around 1.0 A. The operating junction temperature range is -55°C to 150°C, covering automotive under-hood and industrial extended-temperature enclosures. The PG-SOT323 supplier package is a standard 3-lead SOT-323 footprint, compatible with the common SC-70 land pattern.
Gate drive and switching — 1.8 V threshold, ±8 V max
The gate threshold voltage is 750 mV maximum at 3.7 µA drain current, and the drive voltage for minimum Rds(on) is 2.5 V. The part is fully rated for 1.8 V logic drive (the max Rds(on) condition), making it usable in 1.8 V systems like battery-powered IoT nodes or low-voltage FPGA I/O banks. The absolute maximum gate-source voltage is ±8 V, so 5 V logic is safe, but 12 V gate drive is not — stay within the ±8 V rail.
Lifecycle and procurement posture
No official second-source or pin-compatible alternate is listed on the Infineon cross-reference for this exact order code.