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Infineon Technologies BSS806NH6327XTSA1
Infineon Technologies

BSS806NH6327XTSA1 N-Channel MOSFET, 20V 2.3A, 57mOhm at 2.5V

MPNBSS806NH6327XTSA1
End of Life

Infineon OptiMOS™ N-Channel MOSFET, 20 V drain-source, 2.3 A continuous drain current, 57 mOhm max on-resistance at 2.5 V gate drive, PG-SOT23 package, -55°C to 150°C junction temperature.

$0.53Ref. price · indicative, final on quote
BSS806NH6327XTSA1 datasheet
PackagingTO-236-3, SC-59, SOT-23-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BSS806NH6327XTSA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 2.5V
Current - continuous drain (Id) @ 25°C2.3A (Ta)
Power dissipation500mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id750mV @ 11µA
Rds on (Max) @ id, vgs57mOhm @ 2.3A, 2.5V
Gate charge (Qg) (Max) @ vgs1.7 nC @ 2.5 V
Input capacitance (Ciss) (Max) @ vds529 pF @ 10 V

Product details

20 V logic-level switch in a SOT-23 footprint

The BSS806NH6327XTSA1 is an N-Channel MOSFET with 57 mOhm maximum on-resistance at 2.5 V gate drive. The PG-SOT23 package (SOT-23-3 footprint) keeps the board area under 3 mm².

Gate charge and switching losses

Total gate charge is 1.7 nC at 2.5 V gate drive. The 529 pF input capacitance at 10 V drain-source gives a rough handle on turn-on delay.

Temperature range and environment

Maximum power dissipation is 500 mW at 25°C ambient — derate above that per the thermal resistance of the SOT-23 pad. The ROHS3 compliance and lead-free construction match current assembly restrictions for most markets.

Frequently asked questions

What is the Rds(on) of BSS806NH6327XTSA1 at 2.5V?

Maximum on-resistance is 57 mOhm at 2.3 A drain current with 2.5 V gate drive. The drive voltage range for achieving rated Rds(on) is 1.8 V to 2.5 V.

Is BSS806NH6327XTSA1 lead-free and RoHS compliant?

Yes, it is ROHS3 compliant. The construction is lead-free, consistent with current RoHS exemptions for semiconductor devices.