57 mOhm at 2.5 V gate drive — what it buys the low-voltage rail
The headline spec is the 57 mOhm maximum on-resistance at 2.5 V gate drive — this means the part turns on hard from a 3.3 V or 1.8 V logic rail without needing a separate gate driver boost stage. It is built for low-voltage load switching, DC-DC converter synchronous rectification, and power distribution in automotive body electronics and industrial control modules.
AEC-Q101 and the 150 °C junction ceiling
Qualified to AEC-Q101, the part is screened for automotive-grade reliability — thermal cycling, high-temperature reverse bias, and humidity stress. The 500 mW power dissipation at 25 °C ambient in the SOT-23 package limits continuous current in still air; the 2.3 A rating assumes adequate PCB copper for heat spreading.
Gate charge and drive compatibility
Total gate charge is 1.7 nC at 2.5 V, with a maximum gate threshold of 750 mV at 11 µA. The low Qg allows direct PWM drive from a microcontroller GPIO at switching frequencies up to several hundred kilohertz without significant gate-drive losses. Input capacitance is 529 pF at 10 V drain bias, which keeps the Miller plateau short and reduces cross-conduction risk during fast edge transitions.
Package and footprint for the board
Supplied in the PG-SOT23 package (TO-236-3 / SC-59 / SOT-23-3 footprint), surface-mount. The 0.50 mm pitch and low profile suit dense PCB layouts in automotive ECU and portable equipment designs.
Sourcing and lifecycle posture
No official second-source or direct replacement is listed in the manufacturer cross-reference — the part is sole-sourced to Infineon's HEXFET® line.