Skip to main content
Infineon Technologies BSS606NH6327XTSA1
Infineon Technologies

BSS606NH6327XTSA1 N-Channel MOSFET, 60V 3.2A SOT89

MPNBSS606NH6327XTSA1
End of Life

Infineon OptiMOS BSS606NH6327XTSA1, N-Channel MOSFET, 60 V Vdss, 3.2 A Id, 60 mOhm Rds(on) at 10 V, PG-SOT89 package, -55 to 150 °C junction temperature.

$0.56Ref. price · indicative, final on quote
BSS606NH6327XTSA1 datasheet
PackagingTO-243AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSS606NH6327XTSA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C3.2A (Ta)
Power dissipation1W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-243AA
Vgs(th) (Max) @ id2.3V @ 15µA
Rds on (Max) @ id, vgs60mOhm @ 3.2A, 10V
Gate charge (Qg) (Max) @ vgs5.6 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds657 pF @ 25 V

Product details

Gate drive and switching — what the numbers tell the repair tech

Gate threshold is 2.3 V maximum at 15 µA drain current, and the drive voltage range for achieving the rated on-resistance is 4.5 V to 10 V — a 3.3 V logic GPIO may not fully enhance it, so a 5 V rail or a level-shifted gate signal is the safer call. Total gate charge is 5.6 nC at 5 V, and input capacitance is 657 pF at 25 V drain — low enough that a microcontroller pin with 10 mA drive capability can switch it at tens of kilohertz without an external driver.

Frequently asked questions

What is the Rds(on) of BSS606NH6327XTSA1?

The maximum on-resistance is 60 mOhm at 3.2 A drain current with 10 V gate drive.

Can BSS606NH6327XTSA1 replace IPD50R950CEAUMA1?

No — the IPD50R950CEAUMA1 is a 500 V CoolMOS device rated for 4.3 A with 950 mOhm Rds(on), a completely different voltage class and application space. The BSS606NH6327XTSA1 is a 60 V low-power part.