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Infineon Technologies BSS316NH6327XTSA1

Infineon BSS316NH6327XTSA1 N-Channel MOSFET, 30V 1.4A SOT-23

MPNBSS316NH6327XTSA1
End of Life

Infineon OptiMOS N-Channel MOSFET, 30V Vdss, 1.4A continuous drain, 160mOhm Rds(on) at 10V, 0.6nC gate charge, SOT-23-3 package, -55°C to 150°C junction temperature.

$0.39Ref. price · indicative, final on quote
Infineon Technologies BSS316NH6327XTSA1 datasheet (PDF)
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSS316NH6327XTSA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C1.4A (Ta)
Power dissipation500mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2V @ 3.7µA
Rds on (Max) @ id, vgs160mOhm @ 1.4A, 10V
Gate charge (Qg) (Max) @ vgs0.6 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds94 pF @ 15 V

Product details

Small-signal N-channel for tight spots

The Infineon BSS316NH6327XTSA1 is an N-channel enhancement-mode MOSFET from the OptiMOS series, rated for 30 V drain-source and 1.4 A continuous drain current in a SOT-23-3 package. With a maximum on-resistance of 160 mOhm at 10 V gate drive and a gate charge of just 0.6 nC at 5 V, it is built for low-voltage DC-DC converters, load switches, and signal-level power management where board space is tight and switching efficiency matters.

The OptiMOS series is a current-production portfolio, so the BOM line is stable for new designs and multi-year manufacturing runs.

Mounting and thermal reality

Surface-mount in a PG-SOT23 package.

Frequently asked questions

Is BSS316NH6327XTSA1 RoHS compliant?

Yes, Infineon lists this part as ROHS3 Compliant and lead-free. The ROHS3 status covers all six original substances plus the four phthalates added under EU Directive 2015/863.

What is the Rds(on) of BSS316NH6327XTSA1?

The maximum on-resistance is 160 mOhm at a drain current of 1.4 A with a 10 V gate drive. The drive voltage for achieving rated Rds(on) is specified at both 4.5 V and 10 V.

What is the closest functional equivalent to BSS316NH6327XTSA1?

The IPD50R950CEAUMA1 is a different device class — a 500 V CoolMOS CE N-channel FET with 950 mOhm Rds(on) and 4.3 A rating in a DPAK package. It is not a pin-compatible or functional substitute for this 30 V SOT-23 part. For a direct SOT-23 replacement, look at other Infineon OptiMOS 30 V N-channel devices in the same package family.