P-Channel load switch in a SOT-23 footprint
The Infineon BSS315PH6327XTSA1 is a P-Channel enhancement-mode MOSFET from the OptiMOS™ series, rated for 30 V drain-source breakdown and 1.5 A continuous drain current in the SOT-23-3 package. It switches a low-side or high-side load from a 4.5 V to 10 V gate drive, with a maximum on-resistance of 150 mOhm at 10 V gate bias. The junction temperature range of -55°C to 150°C covers industrial and automotive under-hood environments without derating concerns at moderate ambient.
Gate drive and switching characteristics
Gate threshold voltage maxes at 2 V at 11 µA drain current. Gate charge is 2.3 nC at 5 V. Input capacitance measures 282 pF at 15 V drain-source.
Lifecycle and compliance
ROHS3 compliant, with no exemptions expiring. The part carries the OptiMOS™ series identifier for traceability to Infineon's process generation.
