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Infineon Technologies BSS315PH6327XTSA1

Infineon BSS315PH6327XTSA1 P-Channel MOSFET, 30V 1.5A SOT-23

MPNBSS315PH6327XTSA1
End of Life

Infineon OptiMOS™ P-Channel MOSFET, 30 V drain-source, 1.5 A continuous drain, 150 mOhm Rds(on) at 10 V, SOT-23-3 surface-mount package, -55°C to 150°C junction temperature.

$0.46Ref. price · indicative, final on quote
Infineon Technologies BSS315PH6327XTSA1 datasheet (PDF)
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSS315PH6327XTSA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C1.5A (Ta)
Power dissipation500mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2V @ 11µA
Rds on (Max) @ id, vgs150mOhm @ 1.5A, 10V
Gate charge (Qg) (Max) @ vgs2.3 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds282 pF @ 15 V

Product details

P-Channel load switch in a SOT-23 footprint

The Infineon BSS315PH6327XTSA1 is a P-Channel enhancement-mode MOSFET from the OptiMOS™ series, rated for 30 V drain-source breakdown and 1.5 A continuous drain current in the SOT-23-3 package. It switches a low-side or high-side load from a 4.5 V to 10 V gate drive, with a maximum on-resistance of 150 mOhm at 10 V gate bias.

Gate threshold voltage maxes at 2 V at 11 µA drain current. Gate charge is 2.3 nC at 5 V. Input capacitance measures 282 pF at 15 V drain-source.

ROHS3 compliant, with no exemptions expiring. The part carries the OptiMOS™ series identifier for traceability to Infineon's process generation.

Frequently asked questions

Is BSS315PH6327XTSA1 RoHS compliant?

Yes, it is ROHS3 compliant, with no restricted substances above the exemption thresholds.