BSS225H6327FTSA1

Infineon Technologies · SIPMOS® Series

MOSFET N-CH 600V 90MA SOT89

Infineon Technologies BSS225H6327FTSA1
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BSS225H6327FTSA1 specifications
Parameter / AttributeSpecification / Value
SeriesSIPMOS®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C90mA (Ta)
Power dissipation1W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-243AA
Vgs(th) (Max) @ id2.3V @ 94µA
Rds on (Max) @ id, vgs45Ohm @ 90mA, 10V
Gate charge (Qg) (Max) @ vgs5.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds131 pF @ 25 V
BSS225H6327FTSA1
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