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Infineon Technologies BSS223PWH6327XTSA1

Infineon BSS223PWH6327XTSA1 P-Channel MOSFET, 20 V, 390 mA

MPNBSS223PWH6327XTSA1
End of Life

Infineon OptiMOS P-Channel MOSFET, BSS223PWH6327XTSA1, 20 V drain-source, 390 mA continuous drain, 1.2 Ohm Rds(on) at 4.5 V, SOT-323 package, -55°C to 150°C junction temperature.

$0.36Ref. price · indicative, final on quote
Infineon Technologies BSS223PWH6327XTSA1 datasheet (PDF)
PackagingSC-70, SOT-323
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSS223PWH6327XTSA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C390mA (Ta)
Power dissipation250mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseSC-70, SOT-323
Vgs(th) (Max) @ id1.2V @ 1.5µA
Rds on (Max) @ id, vgs1.2Ohm @ 390mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.62 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds56 pF @ 15 V

Product details

The Infineon BSS223PWH6327XTSA1 is a P-Channel enhancement-mode MOSFET from the OptiMOS series, rated for 20 V drain-source and 390 mA continuous drain current. Packaged in a SOT-323 (PG-SOT323) surface-mount case, it is designed for low-voltage load switching, battery protection, and power-rail isolation in space-constrained designs. The 1.2 Ohm maximum on-resistance at 4.5 V gate drive keeps conduction loss manageable for loads up to a few hundred milliamps.

Gate drive and switching behaviour

Gate threshold voltage maxes at 1.2 V at 1.5 µA drain current. Recommended drive voltage range is 2.5 V to 4.5 V for minimum on-resistance.

The SOT-323 (PG-SOT323) package is a surface-mount case. Power dissipation is limited to 250 mW at ambient temperature.

Frequently asked questions

Is BSS223PWH6327XTSA1 RoHS compliant?

Yes, the BSS223PWH6327XTSA1 is ROHS3 compliant per Infineon's specification.

What are the alternatives for BSS223PWH6327XTSA1?

The IPD50R950CEAUMA1 is a different class of device — an N-Channel 500 V CoolMOS MOSFET — not a functional equivalent. For a P-Channel small-signal MOSFET in SOT-323, look for parts with similar Vdss (20 V), Id (390 mA), and Rds(on) specs within the same package.