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Infineon Technologies BSS223PWH6327XTSA1
Infineon Technologies

Infineon BSS223PWH6327XTSA1 P-Channel MOSFET, 20 V, 390 mA

MPNBSS223PWH6327XTSA1
End of Life

Infineon OptiMOS P-Channel MOSFET, BSS223PWH6327XTSA1, 20 V drain-source, 390 mA continuous drain, 1.2 Ohm Rds(on) at 4.5 V, SOT-323 package, -55°C to 150°C junction temperature.

$0.36Ref. price · indicative, final on quote
BSS223PWH6327XTSA1 datasheet
PackagingSC-70, SOT-323
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BSS223PWH6327XTSA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C390mA (Ta)
Power dissipation250mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseSC-70, SOT-323
Vgs(th) (Max) @ id1.2V @ 1.5µA
Rds on (Max) @ id, vgs1.2Ohm @ 390mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.62 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds56 pF @ 15 V

Product details

Small-signal P-Channel load switch for 3.3 V and 5 V rails

The Infineon BSS223PWH6327XTSA1 is a P-Channel enhancement-mode MOSFET from the OptiMOS series, rated for 20 V drain-source and 390 mA continuous drain current. Packaged in a SOT-323 (PG-SOT323) surface-mount case, it is designed for low-voltage load switching, battery protection, and power-rail isolation in space-constrained designs. The 1.2 Ohm maximum on-resistance at 4.5 V gate drive keeps conduction loss manageable for loads up to a few hundred milliamps. Operating junction temperature spans -55°C to 150°C, suiting it for industrial and automotive environments where ambient heat or nearby power stages raise the board temperature.

Gate drive and switching behaviour

Gate threshold voltage maxes at 1.2 V at 1.5 µA drain current. Recommended drive voltage range is 2.5 V to 4.5 V for minimum on-resistance.

Package and footprint

The SOT-323 (PG-SOT323) package is a surface-mount case. Power dissipation is limited to 250 mW at ambient temperature.

Frequently asked questions

Is BSS223PWH6327XTSA1 RoHS compliant?

Yes, the BSS223PWH6327XTSA1 is ROHS3 compliant per Infineon's specification.

What are the alternatives for BSS223PWH6327XTSA1?

The IPD50R950CEAUMA1 is a different class of device — an N-Channel 500 V CoolMOS MOSFET — not a functional equivalent. For a P-Channel small-signal MOSFET in SOT-323, look for parts with similar Vdss (20 V), Id (390 mA), and Rds(on) specs within the same package.