BSS192PH6327FTSA1

Infineon Technologies · SIPMOS® Series

Infineon SIPMOS® BSS192PH6327FTSA1, P-Channel MOSFET, 250 V Vdss, 190 mA Id, 12 Ohm Rds(on) @ 190 mA, 10 V, ±20 V Vgs(max), -55°C to 150°C junction temp, PG-SOT89 package, Surface Mount, ROHS3 compliant, Active.

Infineon Technologies BSS192PH6327FTSA1
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[IN STOCK] In Stock: 37 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BSS192PH6327FTSA1 specifications
Parameter / AttributeSpecification / Value
SeriesSIPMOS®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)2.8V, 10V
Current - continuous drain (Id) @ 25°C190mA (Ta)
Power dissipation1W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-243AA
Vgs(th) (Max) @ id2V @ 130µA
Rds on (Max) @ id, vgs12Ohm @ 190mA, 10V
Gate charge (Qg) (Max) @ vgs6.1 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds104 pF @ 25 V

Technical details

250 V P-Channel MOSFET in a SOT89 — what it is for

Packaged in a PG-SOT89 surface-mount case, it is built for medium-voltage switching and load management in space-constrained designs. The 12 Ohm maximum on-resistance at 190 mA and 10 V gate drive keeps conduction losses predictable for low-current high-voltage rails.

Where it fits in a design

This is a high-voltage P-Channel switch for load disconnect, reverse-polarity protection, and high-side switching in power supplies, battery management, and industrial controls. The SOT89 footprint is small enough for handheld and portable equipment but still hand-solderable for prototyping.

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