Infineon SIPMOS N-Channel Depletion Mode MOSFET, 60V Vdss, 230mA Id, 3.5Ohm Rds(on) @ 160mA, 10V, SOT-23-3, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | SIPMOS® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 0V, 10V |
| Current - continuous drain (Id) @ 25°C | 230mA (Ta) |
| Power dissipation | 360mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Depletion Mode |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 2.4V @ 26µA |
| Rds on (Max) @ id, vgs | 3.5Ohm @ 160mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 2.9 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 44 pF @ 25 V |
The Infineon BSS159NH6906XTSA1 is an N-channel depletion-mode MOSFET from the SIPMOS series, built for applications where a normally-on switch is required. Unlike enhancement-mode devices, this part conducts with zero gate-source voltage and turns off when a negative Vgs is applied — a characteristic that suits current-source circuits, normally-on load switches, and linear regulators where fail-safe open is not the default state.
Yes, the BSS159NH6906XTSA1 is an N-channel depletion-mode MOSFET. It conducts with zero gate-source voltage and requires a negative Vgs to turn off, which is the defining behaviour of a depletion-mode device.