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Infineon Technologies BSS138WH6327XTSA1 — Discrete Semiconductors

Infineon BSS138WH6327XTSA1 N-Channel MOSFET

MPNBSS138WH6327XTSA1
Active

Infineon SIPMOS® series, N-Channel MOSFET, 60 V drain-source, 280 mA continuous drain, 3.5 Ohm Rds(on) at 10 V, surface mount SC-70/SOT-323, -55°C to 150°C.

$0.4100Ref. price · indicative, final on quote
PackagingSC-70, SOT-323
RoHSROHS3 Compliant
SeriesSIPMOS®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BSS138WH6327XTSA1 specifications
ParameterValue
SeriesSIPMOS®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C280mA (Ta)
Power dissipation500mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSC-70, SOT-323
Vgs(th) (Max) @ id1.4V @ 26µA
Rds on (Max) @ id, vgs3.5Ohm @ 200mA, 10V
Gate charge (Qg) (Max) @ vgs1.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds43 pF @ 25 V

Product details

Small-signal N-Channel MOSFET in SOT-323

It comes in a compact SC-70 / SOT-323 package (PG-SOT323), making it suitable for space-constrained board layouts where a low-power load switch or signal-level switching is needed. Key specs include a maximum on-resistance of 3.5 Ohm at 200 mA with a 10 V gate drive, a gate charge of just 1.5 nC at 10 V, and an input capacitance of 43 pF at 25 V drain-source. The low gate charge and capacitance mean this part can be driven directly from a microcontroller GPIO or a low-current source without a dedicated gate driver.

What the gate charge and Rds(on) mean for your BOM

Gate charge is 1.5 nC at 10 V. Rds(on) is 3.5 Ohm at 200 mA. Drive voltage is specified at 4.5 V and 10 V to achieve rated Rds(on).

Product status is Active. ROHS3 compliant.

Frequently asked questions

Is BSS138WH6327XTSA1 RoHS compliant?

Yes, it is listed as ROHS3 compliant.