60 V N-Channel MOSFET in SOT-323 — signal-level switching workhorse
The BSS138W E6433: Packaged in a surface-mount SOT-323 (PG-SOT323), this device is built for low-current switching applications where board space is tight — load switches, level shifters, relay drivers, and logic-level interfacing in 12 V and 24 V industrial systems. The 3.5 Ohm maximum on-resistance at 220 mA gate drive (10 V) keeps conduction losses manageable in sub-200 mA paths, and the ±20 V gate-source maximum gives headroom for 12 V and 15 V gate drive without external clamping.
Temperature range and ruggedness
The 500 mW power dissipation at 25°C ambient is typical for a SOT-323 package — derate for higher ambient temperatures if used in a confined enclosure. Gate charge is only 1.5 nC at 10 V, so the gate driver sees a light capacitive load, and input capacitance is 43 pF at 25 V drain-source, which keeps switching losses low in PWM applications up to a few hundred kilohertz.
Sourcing and lifecycle
This is a standard catalog MOSFET with broad distribution coverage. For dual-sourcing or supply resilience, the SOT-323 footprint is shared by many small-signal N-Channel parts from other manufacturers; qualify an alternate against your specific gate-drive voltage and Rds(on) requirements.