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Infineon Technologies BSS138NL6433HTMA1 — Discrete Semiconductors

BSS138NL6433HTMA1 N-Channel MOSFET, 60 V, 230 mA

MPNBSS138NL6433HTMA1
Obsolete

Infineon SIPMOS® BSS138NL6433HTMA1, N-Channel MOSFET, 60 V drain-source, 230 mA continuous drain, 3.5 Ohm Rds(on) at 10 V, PG-SOT23 package, -55°C to 150°C operating temperature.

$0.4400Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSS138NL6433HTMA1 specifications
ParameterValue
SeriesSIPMOS®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C230mA (Ta)
Power dissipation360mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.4V @ 250µA
Rds on (Max) @ id, vgs3.5Ohm @ 230mA, 10V
Gate charge (Qg) (Max) @ vgs1.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds41 pF @ 25 V

Product details

60 V, 230 mA N-channel — small-signal switching

Wide temperature range, standard SOT-23 footprint

The PG-SOT23 surface-mount package is footprint-compatible with the industry-standard SOT-23-3 layout.

Frequently asked questions

What is the Vgs threshold of BSS138NL6433HTMA1?

Maximum gate threshold voltage Vgs(th) is 1.4 V at 250 µA drain current.