60 V, 230 mA small-signal N-channel MOSFET in SOT-23
The Infineon BSS138NH6433XTMA1 is a SIPMOS N-channel enhancement-mode MOSFET in a standard SOT-23-3 surface-mount package. The device is built on Infineon's SIPMOS technology, a planar MOSFET process optimized for low gate charge and fast switching in low-power applications.
The 3.5 Ohm maximum Rds(on) at 230 mA and 10 V gate drive defines the conduction loss in the on-state. At 230 mA, the voltage drop across the channel is about 0.8 V, which at 360 mW maximum power dissipation leaves limited thermal headroom — the part is sized for signal-level switching, not continuous high-current loads. The drive voltage specification of 4.5 V minimum for rated Rds(on) means it can be driven from 3.3 V logic only with reduced performance; at 3.3 V gate drive the on-resistance roughly doubles, so a 5 V or 10 V gate signal is preferred for full rated current.
SOT-23-3 footprint and sourcing
The BSS138NH6433XTMA1 is supplied in a standard SOT-23-3 package (Infineon code PG-SOT23), which is footprint-compatible with the industry-standard SOT-23 small-signal MOSFET layout. The base product number BSS138 is a widely used 60 V N-channel MOSFET, and this specific variant (NH6433) is Infineon's SIPMOS version with the same pinout as the generic BSS138.