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Infineon Technologies BSS127H6327XTSA2

BSS127H6327XTSA2 SIPMOS N-Ch MOSFET, 600 V, 21 mA, SOT-23

MPNBSS127H6327XTSA2
End of Life

Infineon SIPMOS® BSS127H6327XTSA2, N-Channel MOSFET, 600 V Vdss, 21 mA Id, 500 Ohm Rds(on) @ 16 mA, SOT-23-3 package, -55 to 150 °C.

$0.37Ref. price · indicative, final on quote
Infineon Technologies BSS127H6327XTSA2 datasheet (PDF)
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
SeriesSIPMOS®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSS127H6327XTSA2 specifications
ParameterValue
SeriesSIPMOS®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C21mA (Ta)
Power dissipation500mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.6V @ 8µA
Rds on (Max) @ id, vgs500Ohm @ 16mA, 10V
Gate charge (Qg) (Max) @ vgs1 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds28 pF @ 25 V

Product details

600 V in a SOT-23 — the part for high-voltage bias rails

The Infineon BSS127H6327XTSA2 is an N-channel SIPMOS® MOSFET that squeezes a 600 V drain-source rating into a PG-SOT23 package. With a continuous drain current of 21 mA at 25 °C and a maximum on-resistance of 500 Ohm at 16 mA gate drive, this is not a power switch — it is a high-voltage, low-current transistor sized for auxiliary supply rails, start-up circuits, and bias feeds in off-line converters and industrial PSUs.

What the 500 Ohm Rds(on) means for your BOM

The 500 Ohm maximum on-resistance at Vgs=10 V and Id=16 mA sets a hard ceiling on useful load current. At 21 mA the voltage drop across the channel is over 10 V — so the part operates as a saturated switch only for loads drawing a few milliamps. The 500 mW power dissipation limit in the SOT-23 package reinforces the same message: this is a signal-level FET, not a driver.

Frequently asked questions

Is BSS127H6327XTSA2 suitable for high-frequency switching?

The gate charge is only 1 nC at Vgs=10 V and input capacitance is 28 pF at Vds=25 V, so the switching losses are low. The limiting factor is the high Rds(on) and the 500 mW package dissipation — it can switch at moderate frequencies (tens to low hundreds of kHz) in low-duty-cycle or low-current auxiliary circuits, but it is not designed for high-frequency power conversion.