100 V N-channel in a small SOT-23 footprint
The BSS123NH6433XTMA1 is an Infineon OptiMOS N-channel MOSFET rated for 100 V drain-source voltage and 190 mA continuous drain current at 25°C. In the SOT-23-3 package, it fits signal-level switching and load management in space-constrained designs.
Parametric fit for low-power switching
Maximum on-resistance is 6 Ohm at 190 mA drain current with 10 V gate drive; the drive voltage range is 4.5 V to 10 V, so it can be driven from 5 V logic or a 3.3 V rail stepped up through a gate driver. Gate charge is 0.9 nC at 10 V, keeping switching losses low in high-frequency applications. Input capacitance is 20.9 pF at 25 V drain-source, which means the gate drive sees a light capacitive load. Operating junction temperature spans -55°C to 150°C, covering industrial and automotive under-hood environments. Maximum power dissipation is 500 mW at 25°C ambient, so thermal management in a small board area is straightforward.
Package and compliance details
Supplied in SOT-23-3 (PG-SOT23) surface-mount package, available in Tape & Reel or Cut Tape. The base product number is BSS123. Infineon lists this part as Active and ROHS3 compliant.