100 V N-channel in a SOT-23 — what it handles
The Infineon BSS123IXTMA1 is a 100 V N-channel enhancement-mode MOSFET from the OptiMOS series, built for low-power switching and load-management tasks where board space is tight.
Gate drive and switching — logic-level compatibility
With a maximum gate threshold voltage of 1.8 V at 13 µA, this part turns on cleanly from 3.3 V logic rails, though the drive voltage range for rated Rds(on) is 4.5 V to 10 V. The gate charge is only 0.63 nC at 10 V, and input capacitance measures 15 pF at 50 V drain bias — both low enough for direct GPIO drive in moderate-speed switching up to a few hundred kHz. The ±20 V maximum gate-source rating gives margin for ringing on long traces.
Package and power dissipation
Maximum power dissipation is 500 mW at 25°C ambient (Ta), typical for a SOT-23-3 device. The small footprint means thermal management relies on the PCB copper; for continuous loads near the 190 mA limit, ensure adequate trace width and via stitching to the ground plane.
Lifecycle and sourcing
The base product number is BSS123, and the IXTMA1 suffix denotes the specific reel and packaging variant.