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Infineon Technologies BSS123E6327 — Discrete Semiconductors
Infineon Technologies

Infineon BSS123E6327 SIPMOS N-Channel MOSFET, 100 V, 170 mA

MPNBSS123E6327
Obsolete

Infineon SIPMOS N-Channel MOSFET, 100 V drain-source, 170 mA continuous drain at 25 °C, 6 Ohm Rds(on) at 10 V, SOT-23-3 surface-mount package, -55 to 150 °C junction temperature.

$0.4700Ref. price · indicative, final on quote
BSS123E6327 datasheet
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BSS123E6327 Technical Specifications
ParameterValue
SeriesSIPMOS®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C170mA (Ta)
Power dissipation360mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.8V @ 50µA
Rds on (Max) @ id, vgs6Ohm @ 170mA, 10V
Gate charge (Qg) (Max) @ vgs2.67 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds69 pF @ 25 V

Product details

100 V N-channel in a SOT-23 — what it was designed for

The BSS123E6327: Maximum on-resistance is 6 Ohm at Vgs = 10 V and Id = 170 mA.

Obsolete — sourcing through independent distribution

The BSS123E6327 is listed as Obsolete by Infineon.

Key ratings for the BOM decision

The 100 V drain-source rating is the headline spec: it allows the FET to switch loads on 48 V rails, 72 V telecom buses, or 100 V intermediate buses with margin. The 170 mA continuous drain limit sets the load ceiling — at 170 mA and 6 Ohm Rds(on), conduction loss is about 170 mW, within the 360 mW power dissipation limit at 25 °C ambient. Gate threshold voltage is 1.8 V maximum at 50 µA drain current. Gate charge is 2.67 nC at 10 V.

Frequently asked questions

Is BSS123E6327 obsolete?

Yes, Infineon lists the BSS123E6327 as Obsolete. Sourcing is through the surplus and broker channel.

What is the replacement for BSS123E6327?

Infineon has not specified an official replacement for the BSS123E6327. For a new design, look at current-production 100 V N-channel MOSFETs in SOT-23 from Infineon's OptiMOS or StrongIRFET families, or from competitors such as Diodes Inc. or ON Semiconductor — confirm pin-compatibility and Rds(on) targets before substituting.

What are the specifications of BSS123E6327?

N-channel MOSFET, 100 V drain-source, 170 mA continuous drain at 25 °C, 6 Ohm Rds(on) max at 10 V, 2.67 nC gate charge, 69 pF input capacitance, PG-SOT23 package, -55 to 150 °C junction temperature.