Infineon Technologies BSS123 E6433
MPNBSS123 E6433
Obsolete
$0.5000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | SIPMOS® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 170mA (Ta) |
| Power dissipation | 360mW (Ta) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 1.8V @ 50µA |
| Rds on (Max) @ id, vgs | 6Ohm @ 170mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 2.67 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 69 pF @ 25 V |