100V small-signal N-channel for 24V/48V rails
The BSS119NH6327XTSA1 is an N-channel OptiMOS MOSFET with a 100 V drain-source rating. Gate charge is only 0.6 nC at 10 V, so the switching losses in a 100 kHz converter are negligible.
Listed as Active by Infineon with ROHS3 compliance. The PG-SOT23 package is a standard Infineon leadframe, not a custom die — second-sourcing options exist within the OptiMOS family (BSS123NH6327XTSA1 shares the same 100 V rating and SOT-23 footprint, though with a lower 1.8 V gate threshold).
Thermal budget in a SOT-23
Power dissipation is capped at 500 mW at ambient — the SOT-23 body limits continuous current more than the silicon die. At 190 mA with 6 Ohm Rds(on), conduction loss is about 217 mW; that leaves margin for switching loss and ambient temperature up to 85°C before hitting the 500 mW ceiling.