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Infineon Technologies BSS119NH6327XTSA1
Infineon Technologies

Infineon BSS119NH6327XTSA1 N-Channel MOSFET, 100V, 190mA

MPNBSS119NH6327XTSA1
End of Life

Infineon OptiMOS N-Channel MOSFET, 100 V drain-source, 190 mA continuous drain, 6 Ohm Rds(on) at 10 V gate drive, ±20 Vgs max, PG-SOT23 surface-mount package, -55°C to 150°C junction temperature.

$0.4Ref. price · indicative, final on quote
BSS119NH6327XTSA1 datasheet
PackagingTO-236-3, SC-59, SOT-23-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BSS119NH6327XTSA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C190mA (Ta)
Power dissipation500mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.3V @ 13µA
Rds on (Max) @ id, vgs6Ohm @ 190mA, 10V
Gate charge (Qg) (Max) @ vgs0.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds20.9 pF @ 25 V

Product details

100V small-signal N-channel for 24V/48V rails

The BSS119NH6327XTSA1 is an N-channel OptiMOS MOSFET with a 100 V drain-source rating. Gate charge is only 0.6 nC at 10 V, so the switching losses in a 100 kHz converter are negligible.

Listed as Active by Infineon with ROHS3 compliance. The PG-SOT23 package is a standard Infineon leadframe, not a custom die — second-sourcing options exist within the OptiMOS family (BSS123NH6327XTSA1 shares the same 100 V rating and SOT-23 footprint, though with a lower 1.8 V gate threshold).

Thermal budget in a SOT-23

Power dissipation is capped at 500 mW at ambient — the SOT-23 body limits continuous current more than the silicon die. At 190 mA with 6 Ohm Rds(on), conduction loss is about 217 mW; that leaves margin for switching loss and ambient temperature up to 85°C before hitting the 500 mW ceiling.

Frequently asked questions

What is the Rds(on) of BSS119NH6327XTSA1?

The drive voltage for minimum on-resistance is 4.5 V or higher.

Is BSS119NH6327XTSA1 RoHS compliant?

Yes, it is ROHS3 compliant per Infineon's lifecycle record.

Can I use BSS119NH6327XTSA1 in a 5V gate drive circuit?

Yes — the gate threshold is 2.3 V maximum, and 5 V logic is above the 4.5 V minimum drive voltage for rated Rds(on). The maximum gate-source rating is ±20 V, so 5 V is well within the safe operating area.

What is the replacement or equivalent for BSS119NH6327XTSA1?

The BSS123NH6327XTSA1 is a pin-compatible OptiMOS N-channel with the same 100 V rating and SOT-23 package, but with a lower 1.8 V gate threshold. It is a functional second source for designs that can accept the threshold difference.