Infineon Technologies OptiMOS™ series, Small Signal N-Channel MOSFET, BSS119N H7796, 100 V, 0.19 A, 6 Ohm Rds(on), SMD, Bulk.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Operating temperature high | -55°C to 150°C(TJ) |
| Vgs | ±20 V |
| Power | 0.5 |
| Package_type | Bulk |
| Capacitance_uf | 0.0 |
| Status | Active |
| Supply voltage | 100.0 |
| Vgs(Th) (Max) @ id | 2.3 V @ 13µA |
| Switching current | 0.19 |
| Rds on (Max) @ id, vgs | 6Ohm @ 190mA, 10 V |
| Gate charge (Qg) (Max) @ vgs | 0.6 nC @ 10 V |
The BSS119N H7796 is an N-channel enhancement-mode MOSFET from Infineon's OptiMOS™ family, designed for low-power switching and load management in 100 V applications.
Total gate charge is 0.6 nC at 10 V, keeping the drive energy per switching cycle minimal — useful in battery-powered or high-frequency PWM stages where the gate driver's current budget is tight.
The maximum on-resistance is 6 Ohm at 190 mA drain current with 10 V applied to the gate.