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Infineon Technologies BSR316PH6327XTSA1

Infineon BSR316PH6327XTSA1 P-Channel MOSFET, 100 V, 360 mA

MPNBSR316PH6327XTSA1
End of Life

Infineon SIPMOS P-Channel MOSFET, BSR316PH6327XTSA1, 100 V drain-source, 360 mA continuous drain, 1.8 Ohm Rds(on) at 10 V, SOT-23-3 package, -55°C to 150°C junction temperature.

$0.57Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSR316PH6327XTSA1 Technical Specifications
ParameterValue
SeriesSIPMOS®
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C360mA (Ta)
Power dissipation500mW (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1V @ 170µA
Rds on (Max) @ id, vgs1.8Ohm @ 360mA, 10V
Gate charge (Qg) (Max) @ vgs7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds165 pF @ 25 V

Product details

Small-signal P-Channel with 100 V headroom

The Infineon BSR316PH6327XTSA1 is a P-Channel SIPMOS MOSFET rated for 100 V drain-source and 360 mA continuous drain current in a SOT-23-3 package.

100 V in a SOT-23 — what it buys you

The 100 V drain-source rating is unusually high for a SOT-23 package — most small-signal P-Channel parts top out at 30 V or 60 V. That margin matters when the part is switching a 48 V telecom bus, clamping a flyback primary, or riding through transients on a 24 V industrial rail without avalanche stress. The 1.8 Ohm Rds(on) at 360 mA means the voltage drop across the switch at full load is about 0.65 V — acceptable for a high-side load switch where the load draws tens of milliamps. Gate threshold is 1 V maximum at 170 µA drain current, so the part turns on cleanly with 3.3 V logic — no extra level shifter needed for MCU GPIO drive.

Temperature range and field swap

That covers avionics, downhole logging tools, and outdoor base station gear where the ambient hits -40°C and the self-heating pushes the die. No special orientation tricks — the part marking is legible under a loupe.

Sourcing and lifecycle

ROHS3 compliant.

Frequently asked questions

Can BSR316PH6327XTSA1 be used with 3.3V logic?

Yes. The maximum gate threshold voltage is 1 V at 170 µA drain current, so a 3.3 V GPIO drives the gate fully into the low on-resistance region. The drive voltage range for rated Rds(on) is 4.5 V to 10 V, but at 3.3 V the on-resistance will be higher than the 1.8 Ohm maximum — check the typical transfer curve in the datasheet for the exact value at your gate voltage.