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BSR202NL6327HTSA1

Infineon BSR202NL6327HTSA1 N-Channel MOSFET, 20 V, 3.8 A

MPNBSR202NL6327HTSA1
End of Life

Infineon OptiMOS N-channel MOSFET, 20 V, 3.8 A, 21 mOhm Rds(on) at 4.5 V, SOT-23-3, surface mount, -55 to 150 °C.

$0.69Ref. price · indicative, final on quote
Infineon Technologies BSR202NL6327HTSA1 datasheet (PDF)
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSR202NL6327HTSA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C3.8A (Ta)
Power dissipation500mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.2V @ 30µA
Rds on (Max) @ id, vgs21mOhm @ 3.8A, 4.5V
Gate charge (Qg) (Max) @ vgs8.8 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1147 pF @ 10 V

Product details

20 V, 3.8 A N-channel in a SOT-23-3 foot print

The Infineon BSR202NL6327HTSA1 is a 20 V, 3.8 A N-channel MOSFET built on the OptiMOS trench technology platform.

Total gate charge is 8.8 nC at 4.5 V, which means a typical microcontroller GPIO or a small gate-driver IC can switch the FET in the low-MHz range without excessive drive current.

Thermal and operating envelope

Maximum power dissipation is 500 mW at 25 °C ambient in the SOT-23-3 package — this is the limiting factor for steady-state current above 3.8 A, so the 3.8 A continuous rating assumes adequate PCB copper area for heat spreading.

Frequently asked questions

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