20 V, 3.8 A N-channel in a SOT-23-3 foot print
The Infineon BSR202NL6327HTSA1 is a 20 V, 3.8 A N-channel MOSFET built on the OptiMOS trench technology platform.
Total gate charge is 8.8 nC at 4.5 V, which means a typical microcontroller GPIO or a small gate-driver IC can switch the FET in the low-MHz range without excessive drive current.
Thermal and operating envelope
Maximum power dissipation is 500 mW at 25 °C ambient in the SOT-23-3 package — this is the limiting factor for steady-state current above 3.8 A, so the 3.8 A continuous rating assumes adequate PCB copper area for heat spreading.