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Infineon Technologies BSP92PH6327XTSA1

BSP92PH6327XTSA1 Infineon SIPMOS P-Channel MOSFET

MPNBSP92PH6327XTSA1
End of Life

Infineon SIPMOS® BSP92PH6327XTSA1 P-Channel MOSFET, 250 V Vdss, 260 mA Id, 12 Ohm Rds(on) @ 10 V, PG-SOT223-4 package, -55°C to 150°C operating temperature.

$0.63Ref. price · indicative, final on quote
Infineon Technologies BSP92PH6327XTSA1 datasheet (PDF)
PackagingTO-261-4, TO-261AA
RoHSROHS3 Compliant
SeriesSIPMOS®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSP92PH6327XTSA1 specifications
ParameterValue
SeriesSIPMOS®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)2.8V, 10V
Current - continuous drain (Id) @ 25°C260mA (Ta)
Power dissipation1.8W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id2V @ 130µA
Rds on (Max) @ id, vgs12Ohm @ 260mA, 10V
Gate charge (Qg) (Max) @ vgs5.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds104 pF @ 25 V

Product details

250 V P-channel in a SOT-223 — the high-side switch for compact supplies

It is designed for high-side switching in applications where a positive supply rail must be switched on and off without a level-shifted gate drive — a P-channel simplifies the drive circuit because the source connects to the rail and the gate is pulled low to turn on.

On-resistance and gate drive — 12 Ohm at 10 V, but also specified at 2.8 V

Gate charge is 5.4 nC at 10 V, so switching losses at moderate frequencies (tens of kHz) are low.

It is ROHS3 compliant.

Frequently asked questions

Is BSP92PH6327XTSA1 obsolete or end-of-life?

No — the part is listed as active.