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Infineon Technologies BSP89H6327XTSA1

BSP89H6327XTSA1 - Infineon Technologies

MPNBSP89H6327XTSA1
End of Life

MOSFET N-CH 240V 350MA SOT223-4

$0.63Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
RoHSROHS3 Compliant
SeriesSIPMOS®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSP89H6327XTSA1 specifications
ParameterValue
SeriesSIPMOS®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage240 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C350mA (Ta)
Power dissipation1.8W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id1.8V @ 108µA
Rds on (Max) @ id, vgs6Ohm @ 350mA, 10V
Gate charge (Qg) (Max) @ vgs6.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds140 pF @ 25 V